Infineon IR2110PBF Dual High and Low Side MOSFET IGBT Gate Driver IC 14 Pin DIP

The Infineon IR2110PBF is a high-performance dual channel gate driver IC designed to efficiently drive both high-side and low-side power MOSFETs and IGBTs in half-bridge configurations.

Housed in a through-hole 14-pin DIP package, this robust Power MOSFET IGBT driver IC supports a wide supply voltage range and high voltage bootstrap operation, making it ideal for industrial power electronics and motor control applications.

Features:

• Dual independent high-side and low-side drivers in one IC.
• Supports high-voltage bootstrap operation up to ~500 V.
• Wide logic supply range: 3.3 V to 20 V.
• Delivers up to ~2 – 2.5 A peak source/sink currents for fast switching.
• CMOS Schmitt-triggered inputs with pull-down resistors.
• Undervoltage lockout for both channels.
• dV/dt immunity for robust performance in noisy environments.

Specifications:

Number of Pins: 14-Pin DIP
Supply Voltage: 3.3 V – 20 V
Peak Output Current: Up to ~2.5 A source/sink
High Voltage Operation Up to ~500 V bootstrap
Logic Input Type CMOS Schmitt-trigger
Operating Temp. –40 °C to +125 °C
Mounting Type Through Hole
Driver Configuration High & Low Side (Half-Bridge)

Applications:

• Motor drive and industrial automation systems.
• Power supply switching and UPS systems.
• Robotics power electronics.
• Solar inverters and energy conversion circuits.
• Battery management and DC-DC converters.

Package Includes:

• 1× Infineon IR2110PBF Gate Driver IC Dual (14-Pin DIP)